Floating Gate Voltage Trajectory & Charge States

V Source (0V) C_BN Floating Gate V_FG: -5V Q_net: +5 C_ox Back Gate V_BG: -10V
-10V (Erase) +10V (Program)
V_{BG} (입력): -10 V
V_{FG} (전위): -5 V
Q_{net} (알짜): +5
State: Initial Erased
📄 Reference Paper Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory

🔗 Read on ACS Nano (10.1021/acsnano.0c10005)